High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on Si substrate. facilitated by creation metamorphic buffer layer used to convert from lattice constant (0.543 nm) InP (0.587 nm). The geometry utilizes two top contacts in order be compatible with future large-scale integration. Unlike previous reports, this device capable room temperature operation up 1.6 W peak power. emission wavelength at 293 K 4.82 μm, and operates fundamental transverse mode.